? 2010 ixys corporation, all rights reserved ds100246(03/10) v ces = 1200v i c110 = 50a v ce(sat) 4.2v genx3 tm 1200v igbt w/ diode high-speed pt igbt for 20-50 khz switching IXGN50N120C3H1 symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c 95 a i c110 t c = 110 c 50 a i f110 t c = 110 c 58 a i cm t c = 25 c, 1ms 240 a ssoa v ge = 15v, t vj = 125 c, r g = 2 i cm = 100 a (rbsoa) clamped inductive load v ce v ces p c t c = 25 c 460 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60hz t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g sot-227b, minibloc g = gate, c = collector, e = emitter c either emitter terminal can be used as main or kelvin emitter g e c e c c e153432 features z optimized for low switching losses z square rbsoa z high current capability z isolation voltage 2500 v~ z anti-parallel ultra fast diode z international standard package advantages z high power density z low gate drive requirement applications z power inverters z ups z smps z pfc circuits z welding machines z lamp ballasts advance technical information symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 250 a t j = 125c 14 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 40a, v ge = 15v, note 1 4.2 v t j = 125c 2.6 v
ixys reserves the right to change limits, test conditions, and dimensions. IXGN50N120C3H1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 sot-227b minibloc (ixgn) symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. g fs i c = 40a, v ce = 10v, note 1 24 40 s c ies 4250 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 455 pf c res 120 pf q g 196 nc q ge i c = 50a, v ge = 15v, v ce = 0.5 ? v ces 24 nc q gc 84 nc t d(on) 31 ns t ri 36 ns e on 2.0 mj t d(off) 123 ns t fi 64 ns e off 0.63 1.2 mj t d(on) 23 ns t ri 37 ns e on 3.0 mj t d(off) 170 ns t fi 315 ns e off 2.1 mj r thjc 0.27 c/w r thck 0.05 c/w inductive load, t j = 125c i c = 40a, v ge = 15v v ce = 0.5 ? v ces , r g = 2 note 2 inductive load, t j = 25c i c = 40a, v ge = 15v v ce = 0.5 ? v ces , r g = 2 note 2 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. reverse diode (fred) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v f i f = 50a, v ge = 0v, note 1 2.1 2.4 v t j = 125c 2.3 v i rm 50 a t rr 75 ns r thjc 0.30 c/w i f = 50a, v ge = 0v, -di f /dt = 2500a/ s, v r = 800v notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g .
? 2010 ixys corporation, all rights reserved fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 100 0123456 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ t j = 25oc 0 25 50 75 100 125 150 175 200 225 250 275 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 13v 7v 9v 11v 5v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 100a i c = 50a i c = 25a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 5 6 7 8 9 101112131415 v ge - volts v ce - volts i c = 100 a t j = 25oc 50 a 25 a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc IXGN50N120C3H1
ixys reserves the right to change limits, test conditions, and dimensions. IXGN50N120C3H1 fig. 7. transconductance 0 10 20 30 40 50 60 0 102030405060708090100 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 200 400 600 800 1000 1200 v ce - volts i c - amperes t j = 125oc r g = 2 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v ge - volts v ce = 600v i c = 50a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2010 ixys corporation, all rights reserved fig. 12. inductive switching energy loss vs. gate resistance 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 23456789101112131415 r g - ohms e off - millijoules 2 3 4 5 6 7 8 9 10 11 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 17. inductive turn-off switching times vs. junction temperature 0 50 100 150 200 250 300 350 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f i - nanoseconds 110 120 130 140 150 160 170 180 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 15. inductive turn-off switching times vs. gate resistance 0 50 100 150 200 250 300 350 400 450 500 23456789101112131415 r g - ohms t f i - nanoseconds 100 150 200 250 300 350 400 450 500 550 600 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 13. inductive switching energy loss vs. collector current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 30 40 50 60 70 80 i c - amperes e off - millijoules 0 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 6 7 8 9 10 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 16. inductive turn-off switching times vs. collector current 0 50 100 150 200 250 300 350 400 450 20 30 40 50 60 70 80 i c - amperes t f i - nanoseconds 80 100 120 140 160 180 200 220 240 260 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc IXGN50N120C3H1
ixys reserves the right to change limits, test conditions, and dimensions. IXGN50N120C3H1 fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 80 90 100 20 30 40 50 60 70 80 i c - amperes t r i - nanoseconds 14 16 18 20 22 24 26 28 30 32 34 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 125oc, 25oc fig. 20. inductive turn-on switching times vs. junction temperature 20 40 60 80 100 120 140 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r i - nanoseconds 20 22 24 26 28 30 32 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 23456789101112131415 r g - ohms t r i - nanoseconds 15 20 25 30 35 40 45 50 55 60 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 21. forward current vs. forward voltage 0 10 20 30 40 50 60 70 80 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 v f - volts i f - amperes t j = 25oc t j = 125oc ixys ref: g_50n120c3h1(7n)03-01-10-a
|
